Argitalpenak (95) MIGUEL ANGEL GOSALVEZ AYUSO argitalpenak

2024

  1. Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

    Materials Science in Semiconductor Processing, Vol. 173

2023

  1. Etch and growth rates of GaN for surface orientations in the <0001> crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

    Materials Science in Semiconductor Processing, Vol. 153

  2. Helium focused ion beam induced subsurface damage on Si and SiC substrates: experiments and generative deep neural network modeling via position-dependent input

    Journal of Materials Research and Technology, Vol. 24, pp. 3363-3382

2022

  1. Evolutionary Kinetic Monte Carlo Simulation of Anisotropic Wet Etching of Sapphire at Different Concentrations and Temperatures

    Journal of Microelectromechanical Systems, Vol. 31, Núm. 2, pp. 249-264

2020

  1. Characterization of anisotropic wet etching of single-crystal sapphire

    Sensors and Actuators, A: Physical, Vol. 303

  2. Dominant contributions to the apparent activation energy in two-dimensional submonolayer growth: Comparison between Cu/Ni(111) and Ni/Cu(111)

    Journal of Physics Condensed Matter, Vol. 32, Núm. 44

  3. Modeling of silicon etching

    Handbook of Silicon Based MEMS Materials and Technologies (Elsevier), pp. 345-365

  4. Multiscale Analysis of Phase Transformations in Self-Assembled Layers of 4,4′-Biphenyl Dicarboxylic Acid on the Ag(001) Surface

    ACS Nano, Vol. 14, Núm. 6, pp. 7269-7279

  5. Simulation-based optimization of out-of-plane, variable-height, convoluted quartz micro needle arrays via single-step anisotropic wet etching

    Microelectronic Engineering, Vol. 231

  6. Wet etching of silicon

    Handbook of Silicon Based MEMS Materials and Technologies (Elsevier), pp. 447-480

2019

  1. Another approach to heterogeneous catalysis

    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY

  2. CHARACTERIZATION OF ORIENTATION-DEPENDENT ETCHING PROPERTIES AND SURFACE MORPHOLOGY OF SAPPHIRE CRYSTAL IN WET ETCHING

    2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

  3. Characterization of Orientation-Dependent Etching Properties and Surface Morphology of Sapphire Crystal in Wet Etching

    2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

  4. LEVEL SET SIMULATION OF SURFACE EVOLUTION IN ANISOTROPIC WET ETCHING OF PATTERNED SAPPHIRE SUBTRATE

    2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS)

  5. Level Set Simulation of Surface Evolution in Anisotropic Wet Etching of Patterned Sapphire Subtrate

    Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

2018

  1. The Maximum Positive Curvature Recognition Method to Determine Etch Profiles in Wet Etching of Quartz on at and BT Cuts

    Journal of Microelectromechanical Systems, Vol. 27, Núm. 4, pp. 730-738

2017

  1. EVOLUTIONARY KINETIC MONTE CARLO METHOD FOR THE SIMULATION OF ANISOTROPIC ETCHING OF Z-CUT, AT-CUT AND BT-CUT QUARTZ

    2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS)

  2. Evolutionary Kinetic Monte Carlo method for the simulation of anisotropic etching of Z-cut, at-cut and BT-cut quartz

    TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

  3. Kinetic Monte Carlo method for the simulation of anisotropic wet etching of quartz

    Sensors and Actuators, A: Physical, Vol. 256, pp. 24-34

  4. Microscopic Origin of the Apparent Activation Energy in Diffusion-Mediated Monolayer Growth of Two-Dimensional Materials

    Journal of Physical Chemistry C, Vol. 121, Núm. 37, pp. 20315-20322