Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

  1. Chen, Q.
  2. Gosalvez, M.A.
  3. Li, Q.
  4. Xing, Y.
  5. Zhou, Z.
Revista:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Año de publicación: 2024

Volumen: 173

Tipo: Artículo

DOI: 10.1016/J.MSSP.2023.108104 GOOGLE SCHOLAR