Vicente
Muñoz Sanjosé
Publicaciones en las que colabora con Vicente Muñoz Sanjosé (13)
2016
-
Observation of a charge delocalization from Se vacancies in Bi2Se3: A positron annihilation study of native defects
Physical Review B, Vol. 94, Núm. 1
2013
-
On the interplay of point defects and Cd in non-polar ZnCdO films
Journal of Applied Physics, Vol. 113, Núm. 2
2011
-
Determination of defect content and defect profile in semiconductor heterostructures
Journal of Physics: Conference Series
2010
-
Temperature- and illumination-induced charge-state change in divacancies of GaTe
Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 19
2008
-
Thermal creation of defects in GaTe
Japanese Journal of Applied Physics, Vol. 47, Núm. 12, pp. 8719-8722
2007
-
New method for the determination of the defect profile in thin layers grown over a substrate
Physica Status Solidi (C) Current Topics in Solid State Physics
-
Positron annihilation lifetime spectroscopy of ZnO bulk samples
Physical Review B - Condensed Matter and Materials Physics, Vol. 76, Núm. 8
-
Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers
Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 20
2006
-
Correlation between Zn vacancies and photoluminescence emission in ZnO films
Journal of Applied Physics, Vol. 99, Núm. 5
2005
-
Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
Applied Physics Letters, Vol. 86, Núm. 4
2003
-
Near band edge recombination mechanisms in GaTe
Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 24
2002
-
Recombination processes in unintentionally doped GaTe single crystals
Journal of Applied Physics, Vol. 92, Núm. 12, pp. 7330-7336
2001
-
Deep center luminescence versus surface preparation of ZnSe single crystals
Journal of Materials Research, Vol. 16, Núm. 5, pp. 1245-1248