Grupo de espectroscopías nucleares y luminiscentes
Universitat de València
Valencia, EspañaPublicaciones en colaboración con investigadoras/es de Universitat de València (10)
2016
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Observation of a charge delocalization from Se vacancies in Bi2Se3: A positron annihilation study of native defects
Physical Review B, Vol. 94, Núm. 1
2014
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Mesoporous iron phosphate/phosphonate hybrid materials
Microporous and Mesoporous Materials, Vol. 187, pp. 14-22
2011
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Determination of defect content and defect profile in semiconductor heterostructures
Journal of Physics: Conference Series
2010
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Temperature- and illumination-induced charge-state change in divacancies of GaTe
Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 19
2008
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Thermal creation of defects in GaTe
Japanese Journal of Applied Physics, Vol. 47, Núm. 12, pp. 8719-8722
2006
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Correlation between Zn vacancies and photoluminescence emission in ZnO films
Journal of Applied Physics, Vol. 99, Núm. 5
2005
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Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
Applied Physics Letters, Vol. 86, Núm. 4
2003
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Near band edge recombination mechanisms in GaTe
Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 24
2002
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Recombination processes in unintentionally doped GaTe single crystals
Journal of Applied Physics, Vol. 92, Núm. 12, pp. 7330-7336
2001
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Deep center luminescence versus surface preparation of ZnSe single crystals
Journal of Materials Research, Vol. 16, Núm. 5, pp. 1245-1248