Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

  1. Chen, Q.
  2. Gosalvez, M.A.
  3. Li, Q.
  4. Xing, Y.
  5. Zhou, Z.
Aldizkaria:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Argitalpen urtea: 2024

Alea: 173

Mota: Artikulua

DOI: 10.1016/J.MSSP.2023.108104 GOOGLE SCHOLAR

Garapen Iraunkorreko Helburuak