Instituto de Tecnología Microelectrónica
Institute
Universitat Politècnica de Catalunya
Barcelona, EspañaPublications in collaboration with researchers from Universitat Politècnica de Catalunya (1)
2008
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Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys
Progress in Photovoltaics: Research and Applications, Vol. 16, Núm. 2, pp. 123-127