Publikationen in Zusammenarbeit mit Forschern von Aalto University (19)

2017

  1. Radiation-induced alloy rearrangement in InxGa1−xN

    Applied Physics Letters, Vol. 110, Núm. 13

2013

  1. On the interplay of point defects and Cd in non-polar ZnCdO films

    Journal of Applied Physics, Vol. 113, Núm. 2

2011

  1. Determination of defect content and defect profile in semiconductor heterostructures

    Journal of Physics: Conference Series

2010

  1. Temperature- and illumination-induced charge-state change in divacancies of GaTe

    Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 19

2007

  1. New method for the determination of the defect profile in thin layers grown over a substrate

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Positron annihilation lifetime spectroscopy of ZnO bulk samples

    Physical Review B - Condensed Matter and Materials Physics, Vol. 76, Núm. 8

  3. Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 20

2006

  1. Correlation between Zn vacancies and photoluminescence emission in ZnO films

    Journal of Applied Physics, Vol. 99, Núm. 5

2005

  1. Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness

    Applied Physics Letters, Vol. 86, Núm. 4

2003

  1. Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques

    Journal of Applied Physics, Vol. 94, Núm. 3, pp. 1647-1653

2001

  1. Two-detector Doppler broadening and positron lifetime in multiphase Co-Si alloys

    Materials Science Forum

2000

  1. Characterization of defects in (ZnMg)Se compounds by positron annihilation and photoluminescence

    Journal of Applied Physics, Vol. 88, Núm. 3, pp. 1325-1332

1998

  1. Positron lifetime calculations of hexagonal metals with the true geometry

    Physica Status Solidi (B) Basic Research, Vol. 206, Núm. 2, pp. 509-518

1986

  1. Detection of Ga vacancies in electron irradiated GaAs by positrons

    Applied Physics Letters Applied Physics Letters, Vol. 48, Núm. 12, pp. 809-810

  2. POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS

    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol. 19, Núm. 3, pp. 331-344

  3. Study of formation and reversion of Guinier-Preston zones in Al-4.5 at%Zn-x at%Mg alloys by positrons

    Journal of Materials Science, Vol. 21, Núm. 3, pp. 853-858

1985

  1. Positron-trapping mechanism at grain boundaries

    Physical Review B, Vol. 31, Núm. 11, pp. 6941-6946

  2. Vacancy-zn complexes in inp studied by positrons

    Applied Physics Letters, Vol. 46, Núm. 12, pp. 1136-1138

1984

  1. POSITRON LIFETIME STUDIES OF VACANCY-HYDROGEN INTERACTIONS IN IRRADIATED NIOBIUM AND TANTALUM.

    Proceedings of the Riso International Symposium on Metallurgy and Materials Science