Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

  1. Chen, Q.
  2. Gosalvez, M.A.
  3. Li, Q.
  4. Xing, Y.
  5. Zhou, Z.
Revue:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Année de publication: 2024

Volumen: 173

Type: Article

DOI: 10.1016/J.MSSP.2023.108104 GOOGLE SCHOLAR

Objectifs de Développement Durable