Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

  1. Chen, Q.
  2. Gosalvez, M.A.
  3. Li, Q.
  4. Xing, Y.
  5. Zhou, Z.
Zeitschrift:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Datum der Publikation: 2024

Ausgabe: 173

Art: Artikel

DOI: 10.1016/J.MSSP.2023.108104 GOOGLE SCHOLAR

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