Hydrogen dissociation and diffusion near the Si<111>/a-SiO2 interface: Understanding degradation in MOSFETs

  1. Sheikholeslam, S.A.
  2. Manzano, H.
  3. Grecu, C.
  4. Ivanov, A.
Journal:
Superlattices and Microstructures

ISSN: 1096-3677,  0749-6036

Year of publication: 2018

Volume: 120

Pages: 561-568

Type: Article

DOI: 10.1016/J.SPMI.2018.06.018 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus