University of Nebraska–Lincoln-ko ikertzaileekin lankidetzan egindako argitalpenak (2)

2023

  1. Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

    Nature Communications, Vol. 14, Núm. 1

2018

  1. Solid-State Synapse Based on Magnetoelectrically Coupled Memristor

    ACS Applied Materials and Interfaces, Vol. 10, Núm. 6, pp. 5649-5656