Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

  1. Zhang, K.
  2. Cao, Y.-L.
  3. Fang, Y.-W.
  4. Li, Q.
  5. Zhang, J.
  6. Duan, C.-G.
  7. Yan, S.-S.
  8. Tian, Y.-F.
  9. Huang, R.
  10. Zheng, R.-K.
  11. Kang, S.-S.
  12. Chen, Y.-X.
  13. Liu, G.-L.
  14. Mei, L.-M.
Aldizkaria:
Nanoscale

ISSN: 2040-3372 2040-3364

Argitalpen urtea: 2015

Alea: 7

Zenbakia: 14

Orrialdeak: 6334-6339

Mota: Artikulua

DOI: 10.1039/C5NR00522A GOOGLE SCHOLAR