Etch and growth rates of GaN for surface orientations in the <0001> crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

  1. Guo, X.
  2. Gosalvez, M.A.
  3. Xing, Y.
  4. Chen, Y.
Journal:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Year of publication: 2023

Volume: 153

Type: Article

DOI: 10.1016/J.MSSP.2022.107173 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus