Erratum: Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor (Physical Review Letters (2009) 102 (036601))

1. Tran, M.
2. Jaffrès, H.
3. Deranlot, C.
4. George, J.-M.
5. Fert, A.
6. Miard, A.
7. Lemaître, A.