Reduced hydrogen diffusion in strained amorphous SiO2: Understanding ageing in MOSFET devices

  1. Sheikholeslam, S.A.
  2. Manzano, H.
  3. Grecu, C.
  4. Ivanov, A.
Journal:
Journal of Materials Chemistry C

ISSN: 2050-7526,  2050-7534

Year of publication: 2016

Volume: 4

Issue: 34

Pages: 8104-8110

Type: Article

DOI: 10.1039/C6TC02647H GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus