Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

  1. Men'Shov, V.N.
  2. Tugushev, V.V.
  3. Eremeev, S.V.
  4. Echenique, P.M.
  5. Chulkov, E.V.
Revista:
Physical Review B - Condensed Matter and Materials Physics

ISSN: 1550-235X 1098-0121

Año de publicación: 2015

Volumen: 91

Número: 7

Tipo: Artículo

DOI: 10.1103/PHYSREVB.91.075307 GOOGLE SCHOLAR