Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

  1. Ferre, R.
  2. Orpella, A.
  3. Munoz, D.
  4. Martín, I.
  5. Recart, F.
  6. Voz, C.
  7. Puigdollers, J.
  8. Roca i Cabarrocas, P.
  9. Alcubilla, R.
Aldizkaria:
Progress in Photovoltaics: Research and Applications

ISSN: 1062-7995,  1099-159X

Argitalpen urtea: 2008

Alea: 16

Zenbakia: 2

Orrialdeak: 123-127

Mota: Artikulua

DOI: 10.1002/PIP.802 GOOGLE SCHOLAR
Datuen iturria: Scopus