Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

  1. Avila, A.
  2. Garcia-Bediaga, A.
  3. Oñederra, O.
  4. Rujas, A.
  5. Rodriguez, A.
Actas:
2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

ISBN: 9789075815276

Año de publicación: 2017

Volumen: 2017-January

Tipo: Aportación congreso

DOI: 10.23919/EPE17ECCEEUROPE.2017.8099334 GOOGLE SCHOLAR