Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering
- Hao, Y.
- Chen, X.
- Zhang, L.
- Han, M.-G.
- Wang, W.
- Fang, Y.-W.
- Chen, H.
- Zhu, Y.
- Hong, X.
Zeitschrift:
Nature Communications
ISSN: 2041-1723
Datum der Publikation: 2023
Ausgabe: 14
Nummer: 1
Art: Artikel
