Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

  1. Wang, M.
  2. Cai, W.
  3. Cao, K.
  4. Zhou, J.
  5. Wrona, J.
  6. Peng, S.
  7. Yang, H.
  8. Wei, J.
  9. Kang, W.
  10. Zhang, Y.
  11. Langer, J.
  12. Ocker, B.
  13. Fert, A.
  14. Zhao, W.
Revue:
Nature Communications

ISSN: 2041-1723

Année de publication: 2018

Volumen: 9

Número: 1

Type: Article

DOI: 10.1038/S41467-018-03140-Z GOOGLE SCHOLAR lock_openAccès ouvert editor

Objectifs de Développement Durable

La source de données: Scopus