Surface passivation of crystalline silicon by amorphous silicon carbide films for photovoltaic applications

Résumé

The thesis focuses on the study of surface passivation of crystalline silicon to produce high efficiency solar cells (with conversion efficiencies > 20%) at reduced prices, The state of the art in surface passivation is done by thin films of amorphous silicon nitride grown by Plasma Enhanced Chemical Vapour Deposition (PECVD) and it is a very well established material in the photovoltaic field. In this thesis we offer an alternative that is based on amorphous silicon carbide (a-SiC), also grown by PECVD. The passivation properties of silicon carbide have been already studied in our group finding that excellent results can be obtained when the films are rich in silicon, especially for those doped with phosphorus to make a n-type material . Because this feature leads to undesirable absorption of solar light within the films that does not contribute to the photocurrent, silicon carbide would then be relegated to passivate only the rear side of the solar cell. The aim of this work is to improve surface passivation properties developed previously and add compulsory requisites for the application of crystalline solar cells. These requisites are: uniformity, transparency and antireflective properties, stability under long term operation and stability under high temperature steps (allowing screen printing processes). Also it is the willing to provide a better understanding of the fundamental properties. The main results achieved are enumerated hereafter: - Surface passivation improves with the film thickness and then saturates for films thicker than 50 nm. The mechanism responsible for this improvement is not an increase of the electric charge in the film, as in principle could be thought, but a better saturation of defects by the presence of hydrogen. The amount of charge density seems to be independent of the film. - Experiments of corona charge reveal some treats about the nature of the charge density to provide the field effect passivation. The origin of the charge